کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1797218 1023773 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Synthesis of dense polycrystalline GaN of high purity by the chemical vapor reaction process
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Synthesis of dense polycrystalline GaN of high purity by the chemical vapor reaction process
چکیده انگلیسی

A process for producing high-purity, dense polycrystalline gallium nitride is proposed. Dense polycrystalline gallium nitride was produced by the reaction of ammonia, gallium metal, and a halide source in a quartz boat containing metallic gallium. The process is called the chemical vapor reaction process. The hard crust-like pieces of polycrystalline GaN obtained are of high purity, can be used as source material for single-crystal growth by the ammonothermal technique, sublimation, sputtering, and pulse laser deposition.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 286, Issue 1, 1 January 2006, Pages 50–54
نویسندگان
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