کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1797249 1023775 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fabrication of semiconductor CdS hierarchical nanostructures
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Fabrication of semiconductor CdS hierarchical nanostructures
چکیده انگلیسی

Semiconductor CdS hierarchical nanostructures have been fabricated through thermal evaporation with a mixture of CdS nanopowders, SnO2 nanopowders, and graphite powders. Sn nanoparticles are located at or close to the tips of the nanowires and the growth branches served as the catalyst for the growth of a vapor–liquid–solid mechanism. The morphology and microstructure of CdS axial nanowires and branches were measured by scanning electron microscopy and high-resolution transmission electron microscopy. The long and straight central axial CdS nanowires grow along the [0 0 0 1] direction. Branched CdS nanoneedles are vertically aligned over the surface of the CdS axial nanowire in the radial direction. The hierarchical nanostructures could be a candidate for building ultrahigh sensitivity sensors due to the unique structure.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 293, Issue 2, 1 August 2006, Pages 236–241
نویسندگان
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