کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1797250 | 1023775 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Defect-selective etching of scandium nitride crystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Defect-selective etching was developed for scandium nitride (ScN) crystals. ScN crystals were etched in fused KOH/NaOH eutectic mixtures between 180 and 440 °C for up to 10 min. Several etch pit shapes were observed, and their formation was dependent on the etching temperature. The different etch pit shapes probably originated from different crystalline orientations and defect types. Square etch pits with steps formed at screw and mixed dislocations, as verified by transmission electron microscopy. The density of the etch pits was on the order of 104–106 cm−2 for bulk ScN crystals produced by sublimation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 293, Issue 2, 1 August 2006, Pages 242–246
Journal: Journal of Crystal Growth - Volume 293, Issue 2, 1 August 2006, Pages 242–246
نویسندگان
Z. Gu, J.H. Edgar, D.W. Coffey, J. Chaudhuri, L. Nyakiti, R.G. Lee, J.G. Wen,