Effects of ZnO interlayers on thick GaN/Si film prepared by RF magnetron sputtering

We have successfully prepared a high-quality 2 μm-thick GaN film with three inserted 30 nm-thick ZnO interlayers on Si (1 1 1) substrate without cracks by magnetron sputtering. The effects of the thickness and number of ZnO interlayers on the crystal quality of the GaN films were studied. It was found that the GaN crystal quality initially improved with the increase of the thickness of ZnO interlayers, but deteriorated quickly when the thickness exceeded 30 nm. Multiple ZnO interlayers were used as an effective means to further improve the crystal quality of the GaN film. By increasing the number of interlayers up to three, the cracks can be constrained to a certain extent, and the crystal quality of the GaN film greatly improved.