کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1797414 1023789 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Large silicon crystal hollow-tube growth by the edge-defined film-fed growth (EFG) method
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Large silicon crystal hollow-tube growth by the edge-defined film-fed growth (EFG) method
چکیده انگلیسی
Commercialization of the edge-defined film-fed growth (EFG) process for growth of silicon ribbon crystals in the form of hollow tubes has directed the development of EFG furnaces toward increasing tube diameters in order to maximize productivity in manufacture of wafers for solar cells. The current state-of-the-art EFG production is based on thin-walled octagon tubes with 12.5 cm faces, where tube diameter is of the order of 38 cm. We describe here the challenges faced in bringing EFG technology into large-scale manufacturing, and ongoing development of furnace designs for growth of tubes for larger wafer production using hexagons with 15 cm face widths, and wall thicknesses in the range 250-300 μm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 287, Issue 2, 25 January 2006, Pages 428-432
نویسندگان
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