Combined influence of hydrostatic pressure and temperature on interband emission energy of impurity doped quantum dots in presence of noise

• Interband emission energy (IEE) of doped quantum dot is studied.
• Hydrostatic pressure (HP) and temperature (T) affect IEE.
• The dot is subjected to Gaussian white noise.
• Noise amplifies and suppresses IEE depending on particular condition.

We explore the profiles of interband emission energy (IEE) of impurity doped quantum dots (QDs) under the simultaneous influence of hydrostatic pressure (HP) and temperature (T) and in presence and absence of Gaussian white noise. Noise has been incorporated to the system additively and multiplicatively. In this regard, modulation of IEE by the variation of several other relevant quantities such as electric field, magnetic field, confinement potential, dopant location, dopant potential and aluminium concentration has also been investigated. Gradual alteration of HP and T affects IEE discernibly. Inclusion of noise has been found to enhance or deplete the IEE depending upon its mode of application. Moreover, under given conditions of temperature and pressure, the difference between the impurity-free ground state energy and the binding energy appears to be crucial in determining whether or not the profiles of IEE would resemble that of binding energy. The findings reveal fascinating role played by noise in tailoring the IEE of doped QD system under conspicuous presence of hydrostatic pressure and temperature.