Analysis of electrical conduction mechanism in the high temperature range of the nanostructured photoabsorber Cu2SnS3

The dynamic electrical conduction in the bulk ternary semiconductor compound Cu2SnS3 is studied for the first time in the high temperature range from 300 °C to 440 °C in the frequency range 1 kHz–1 MHz. New activation energy for conduction mechanism is obtained and its frequency dependence is analyzed. The Cole–Cole representation is almost half circular indicating a single contribution to total electrical conduction through the material. The activation energy for the mean relaxation process, obtained separately from the analysis of imaginary part Z″ of complex impedance Z  * and from the equivalent electric circuit, is estimated to be (942±74)meV(942±74)meV. The correlated barrier hopping model is considered to analyze the experimental data. The results are compared with those obtained previously in low temperature range.