Hall effect in hopping regime

• Expressions for Hall coefficient and mobility for hopping conductivity are derived.
• Theoretical result is compared with experimental curves measured on ZnO.
• Simultaneous action of free and hopping conduction channels is considered.
• Non-linearity of hopping Hall coefficient is predicted.

A simple description of the Hall effect in the hopping regime of conductivity in semiconductors is presented. Expressions for the Hall coefficient and Hall mobility are derived by considering averaged equilibrium electron transport in a single triangle of localization sites in a magnetic field. Dependence of the Hall coefficient is analyzed in a wide range of temperature and magnetic field values. Our theoretical result is applied to our experimental data on temperature dependence of Hall effect and Hall mobility in ZnO.