کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1809825 1525208 2014 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influences of strain on binding energies of excitons in InAs/GaAs quantum dot molecules
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Influences of strain on binding energies of excitons in InAs/GaAs quantum dot molecules
چکیده انگلیسی

We investigate theoretically strain effects on bonding properties of excitons in both symmetric and asymmetric InAs/GaAs quantum dot molecules (QDMs). The dependences of exciton binding energies on interdot spacings (d) were systematically explored. A critical dot separation dc can be found where the binding energy reaches a minimum value. The decoupling of electron (hole) and the subsequent degeneracy of hole (electron) respectively lead to the minimum and maximum of binding energies in unstrained (strained) QDMs. The strain can significantly tune binding energies of excitons by changing the height of QD in symmetric QDMs. Furthermore, as compared to unstrained systems, strain results in the transition from direct to indirect excitons in asymmetric QDMs. The variation of binding energies in large asymmetric structures is 2 times higher than that in symmetric ones, showing the obvious modulation character by strain in non-symmetric QDMs.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 438, 1 April 2014, Pages 114–119
نویسندگان
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