کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1809836 1525210 2014 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The role of hydrostatic pressure and temperature on bound polaron in semiconductor quantum dot
ترجمه فارسی عنوان
نقش فشار و دمای هیدرواستاتیک بر پلارون مرز در نقطه کوانتومی نیمه هادی
کلمات کلیدی
نقاط کوانتومی، ناخالصی ها، پلارون، فشار، درجه حرارت
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
چکیده انگلیسی

We studied theoretically the effects of hydrostatic pressure and temperature on the binding energy of shallow hydrogenic impurity in a cylindrical quantum dot (QD) using a variational approach within the effective mass approximation. The hydrostatic stress was applied along the QD growth axis. The interactions between the charge carriers and confined longitudinal optical (LO) phonon modes are taken into account. The numerical computation for GaAs/Ga1−xAlxAsGaAs/Ga1−xAlxAs QD has shown that the binding energy with and without the polaronic correction depends on the location of the impurity and the pressure effect and it is more pronounced for impurities in the QD center. Both the binding energy and the polaronic contribution increase linearly with increasing stress. For each pressure value, these energies are also found to decrease as the temperature increases. The results obtained show that in experimental studies of optical and electronic properties of QDs, the effects of pressure, temperature and polaronic correction on donor impurity binding energy should be taken into consideration.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 436, 1 March 2014, Pages 26–32
نویسندگان
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