کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1809858 | 1525210 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
First-principles study of the elastic, electronic and optical properties of ε-GaSe layered semiconductor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The elastic, electronic and optical properties of ε-GaSe layered semiconductor have been studied from the first principles with the local density approximation (LDA). The optimized structure of GaSe has been found to be in good agreement with the experimental results. The mechanical stability of ε-GaSe is confirmed by calculations of the elastic constants. The calculated band structure shows that the crystal has a direct band gap of 0.816 eV. Furthermore, the linear photon-energy-dependent dielectric functions and some optical constants such as refractive index, extinction, reflectivity and absorption coefficients have been calculated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 436, 1 March 2014, Pages 188–192
Journal: Physica B: Condensed Matter - Volume 436, 1 March 2014, Pages 188–192
نویسندگان
Shun-Ru Zhang, Shi-Fu Zhu, Bei-Jun Zhao, Lin-Hua Xie, Ke-Hui Song,