Compensation mechanisms at high temperature in Y-doped BaTiO3

Samples of BaTiO3 with different concentrations of Y were synthesized from powders. The mixtures of powders were pressed and sintered at 1500 °C for 1 h. Two groups of samples were processed, one satisfying Ba/(Ti+Y)<1 and the other satisfying Ba/(Ti+Y)=1. X-ray diffraction patterns were analyzed by Rietveld refinement and it was concluded that Y3+ occupies the Ti4+ lattice sites. The conductivity behavior as a function of Y concentration suggests that the compensation mechanisms are hole and oxygen vacancies. Due to the presence of charge carriers in the material, high values for the dielectric constant and dielectric loss were observed. Analysis of the microstructure showed that the average grain size decreases as the Y concentration is increased.