کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1810643 | 1025567 | 2012 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Intrinsic defects in GaAs and InGaAs through hybrid functional calculations
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Intrinsic defects in GaAs and InGaAs through hybrid functional calculations Intrinsic defects in GaAs and InGaAs through hybrid functional calculations](/preview/png/1810643.png)
چکیده انگلیسی
Vacancies, antisites, and dangling bonds in GaAs and In0.5Ga0.5As are studied through hybrid density functionals. The As antisite is found to have a low formation energy in As-rich conditions and defect levels at mid-gap in correspondence of experimental defect densities at the GaAs/oxide and InGaAs/oxide interfaces. In n-type GaAs, the Ga vacancy also shows defect levels in agreement with measured defect densities and competitive formation energies. For both GaAs and InGaAs, the As dangling bonds are located near the valence band maximum. The Ga dangling bond in GaAs is found just below the conduction band-edge in correspondence of experimentally observed states, whereas its defect level is resonant with the conduction band in InGaAs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 407, Issue 15, 1 August 2012, Pages 2833–2837
Journal: Physica B: Condensed Matter - Volume 407, Issue 15, 1 August 2012, Pages 2833–2837
نویسندگان
Hannu-Pekka Komsa, Alfredo Pasquarello,