کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1810683 | 1025567 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Symmetry and structure of N-O shallow donor complexes in silicon
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Symmetry and structure of N-O shallow donor complexes in silicon Symmetry and structure of N-O shallow donor complexes in silicon](/preview/png/1810683.png)
چکیده انگلیسی
Shallow donors in silicon related to nitrogen-oxygen complexes have been investigated by piezospectroscopy of their hydrogenic transitions in the far infrared. Complete stress dependences up to 0.25 GPa were obtained for the 1sâ2p0 and 1sâ2p± transitions of the most prominent members of the (N, O)-family, N-O-3 and N-O-5. Very unusual for shallow donors in silicon, the symmetry of the ground state wave function is T2-like. The lifting of orientational degeneracy for stress in the ã1 0 0ã, ã1 1 1ã, and ã1 1 0ã directions is compatible with a C2v defect symmetry. Data from the other species of the (N, O)-family are indicative for the same symmetry. The microscopic structure of these centers, in part contradictory to present theoretical models, is discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 407, Issue 15, 1 August 2012, Pages 2985-2988
Journal: Physica B: Condensed Matter - Volume 407, Issue 15, 1 August 2012, Pages 2985-2988
نویسندگان
H.Ch. Alt, H.E. Wagner,