کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1810691 | 1025567 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles](/preview/png/1810691.png)
چکیده انگلیسی
New findings on the self-interstitial migration in p-type silicon are presented. They are based on experimental studies of the formation kinetics of defects related to interstitial carbon after irradiation with alpha particles. The main parameters characterizing the interaction rate of silicon self-interstitials with substitutional carbon atoms have been determined. A preliminary interpretation of the experimental data is given. The interpretation takes into account different diffusivities of self-interstitials in their singly and doubly ionized states.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 407, Issue 15, 1 August 2012, Pages 3016-3019
Journal: Physica B: Condensed Matter - Volume 407, Issue 15, 1 August 2012, Pages 3016-3019
نویسندگان
L.F. Makarenko, M. Moll, J.H. Evans-Freeman, S.B. Lastovski, L.I. Murin, F.P. Korshunov,