Electrical characterisation of ruthenium Schottky contacts on n-Ge (1 0 0)

Ruthenium (Ru) Schottky contacts were fabricated on n-Ge (1 0 0) by electron beam deposition. Current–voltage (I–V), deep level transient spectroscopy (DLTS), and Laplace-DLTS techniques were used to characterise the as-deposited and annealed Ru/n-Ge (1 0 0) Schottky contacts. The variation of the electrical properties of the Ru samples annealed between 25 °C and 575 °C indicates the formation of two phases of ruthenium germanide. After Ru Schottky contacts fabrication, an electron trap at 0.38 eV below the conduction band with capture cross section of 1.0×10−14 cm−2 is the only detectable electron trap. The hole traps at 0.09, 0.15, 0.27 and 0.30 eV above the valence band with capture cross sections of 7.8×10−13 cm−2, 7.1×10−13 cm−2, 2.4×10−13 cm−2 and 6.2×10−13 cm−2, respectively, were observed in the as-deposited Ru Schottky contacts. The hole trap H(0.30) is the prominent single acceptor level of the E-centre, and H(0.09) is the third charge state of the E-centre. H(0.27) shows some reverse annealing and reaches a maximum concentration at 225 °C and anneals out after 350 °C. This trap is strongly believed to be V–Sb2 complex formed from the annealing of V–Sb defect centre.