کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1811051 | 1025579 | 2012 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A comparison of electronic structure and optical properties between N-doped β-Ga2O3 and N–Zn co-doped β-Ga2O3
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The electronic structure and optical properties of N-doped β-Ga2O3 and N–Zn co-doped β-Ga2O3 are investigated by the first-principles calculation. In the N–Zn co-doped β-Ga2O3 system, the lattice parameters of a, b, c, V decrease and the formation energy of N–Zn co-doped β-Ga2O3 is smaller in comparison with N-doped β-Ga2O3. There are two shallower acceptor impurity levels in N–Zn co-doped β-Ga2O3. Comparing with N-doped β-Ga2O3, the major absorption peak is red-shifted and the impurity absorption edge is blue-shifted for N–Zn co-doped β-Ga2O3. The results show that the N–Zn co-doped β-Ga2O3 is found to be a better method to push p-type conductivity in β-Ga2O3.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 407, Issue 8, 15 April 2012, Pages 1227–1231
Journal: Physica B: Condensed Matter - Volume 407, Issue 8, 15 April 2012, Pages 1227–1231
نویسندگان
Liying Zhang, Jinliang Yan, Yijun Zhang, Ting Li, Xingwei Ding,