کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1811112 1025581 2011 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Phonon transport in silicon–silicon and silicon–diamond thin films: Consideration of thermal boundary resistance at interface
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Phonon transport in silicon–silicon and silicon–diamond thin films: Consideration of thermal boundary resistance at interface
چکیده انگلیسی

Phonon transport across the silicon–silicon and silicon–diamond dielectric films is examined. To simulate the phonon transport in the films EPRT is accounted and numerical solutions are obtained with the consideration of 1 K difference across the films prior to the initiation of the phonon transport. The diffuse mismatch model is introduced to account for the thermal boundary resistance at the interface of the films. To validate the code developed, the steady and transient cases for phonon transport in silicon film are carried out. It is found that the equilibrium temperature of phonons attains higher value at the interface of silicon films in silicon–silicon films than that corresponding to silicon–diamond films. The predictions of phonon temperature distribution in the silicon film agree well with its counterpart reported in the previous studies.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 406, Issue 11, 15 May 2011, Pages 2186–2195
نویسندگان
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