کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1811262 1525240 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Structural, optical and electrical properties of undoped and Si-doped AlxGa1−xN thin films on Si (1 1 1) substrate grown by PA-MBE
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Structural, optical and electrical properties of undoped and Si-doped AlxGa1−xN thin films on Si (1 1 1) substrate grown by PA-MBE
چکیده انگلیسی

We have studied the structural properties of undoped and Si-doped AlxGa1−xN/GaN/AlN on Si (1 1 1) substrate prepared by plasma-assisted molecular beam epitaxy (PA-MBE) using high-resolution X-ray diffraction (HR-XRD) and atomic force microscopy (AFM). In comparison with undoped AlGaN, the roughness and dislocation density on the surface of the AlGaN layer decrease with Si doping. Full width half maximum (FWHM) of the undoped and Si-doped samples were equal to 0.69° and 0.52°, respectively. This indicates that the Si doping improves the crystalline quality of the AlxGa1−xN layer compared with the undoped one. Raman scattering measurement reveals that the optical phonon modes of A1(LO) and E2(H) of the AlGaN show a one-mode and two-modes behavior, respectively. The Fourier-transform infrared reflectance (FTIR) investigation confirms the one-mode (two-mode) behavior of the LO (TO) phonon in our samples. This is in good agreement with Raman measurement. Finally, the barrier height (ΦB) of undoped and Si-doped AlxGa1−xN samples was found to be 0.86 and 0.74 eV, respectively.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 406, Issues 6–7, 15 March 2011, Pages 1267–1271
نویسندگان
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