کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1811361 | 1025593 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study on field-emission characteristics of electrodeposited Co-doped ZnO thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Co-doped ZnO films were fabricated using electrodeposition method on the ITO substrates. The structure of the Co-doped ZnO films was analyzed by X-ray diffraction and scanning electron microscope. The field-emission characteristics of the prepared Co-doped ZnO films were examined using diode structure in a vacuum chamber. The examined results indicate that the Co-doping cause the turn-on field increasing by increasing the concentration of the Co-dopant, probably due to the band gap changing, which could attributed to the sp–d exchange interactions between the band electrons and the localized d electrons of the Co2+ ions substituting Zn ions in the films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 406, Issue 5, 1 March 2011, Pages 1049–1052
Journal: Physica B: Condensed Matter - Volume 406, Issue 5, 1 March 2011, Pages 1049–1052
نویسندگان
Aihua Wang, Zhiguo Zhong, Cheng Lu, Linxia Lv, Xinchang Wang, Binglin Zhang,