کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1811483 1525239 2011 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
I–V characteristics of vanadium-flavonoid complexes based Schottky diodes
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
I–V characteristics of vanadium-flavonoid complexes based Schottky diodes
چکیده انگلیسی

In this study, we have investigated the current–voltage characteristics of the Schottky diodes of two vanadium complexes, VO2(3-fl) (1) (3-fl=3-hydroxyflavone) and VO(acac)2 (2), (acac=acetylacetonate), and their composites with TiO2. Thin films of vanadium complexes and their composites were deposited by the centrifugation method. Current–voltage characteristics of the samples were processed by the modified Shockley equation, Cheung functions and space-charge limited currents (SCLC) approaches. Different junction parameters, such as series resistances, reverse saturation currents, ideality factors and barrier height of the samples, were determined.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 406, Issues 15–16, August 2011, Pages 3011–3017
نویسندگان
, , , ,