کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1811483 | 1525239 | 2011 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
I–V characteristics of vanadium-flavonoid complexes based Schottky diodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: I–V characteristics of vanadium-flavonoid complexes based Schottky diodes I–V characteristics of vanadium-flavonoid complexes based Schottky diodes](/preview/png/1811483.png)
چکیده انگلیسی
In this study, we have investigated the current–voltage characteristics of the Schottky diodes of two vanadium complexes, VO2(3-fl) (1) (3-fl=3-hydroxyflavone) and VO(acac)2 (2), (acac=acetylacetonate), and their composites with TiO2. Thin films of vanadium complexes and their composites were deposited by the centrifugation method. Current–voltage characteristics of the samples were processed by the modified Shockley equation, Cheung functions and space-charge limited currents (SCLC) approaches. Different junction parameters, such as series resistances, reverse saturation currents, ideality factors and barrier height of the samples, were determined.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 406, Issues 15–16, August 2011, Pages 3011–3017
Journal: Physica B: Condensed Matter - Volume 406, Issues 15–16, August 2011, Pages 3011–3017
نویسندگان
Khasan S. Karimov, Mohammad Mahroof-Tahir, Muhammad Saleem, Zubair Ahmad,