Spin currents in graphene under tension

Based on the Tight-Binding model, we have asymmetric massless Dirac fermions as the carriers in graphene under tension. Because of uniaxial strain, the velocities of Dirac fermions depend on their directions. This work studies the effect of the uniaxial strain on the spin transport through a single magnetic barrier of the strained graphene system. The result shows that graphene has a great potential for applications in nano-mechanical spintronic devices. This is because of strain in graphene can induce the spin-dependent pseudo-potentials at the barrier to control the spin currents of the junction.

Research Highlights
► We investigate spin transport in a uniaxially strained graphene-based magnetic tunnel junction.
► Due to strain, the carriers behave like the massless fermions with direction-dependent velocity.
► Strain can induce spin-dependent-pseudo-barrier strength to control spin currents.
► Applying high gate voltage in barrier, the conductance is very sensitive on strain.
► The junction may be applicable for nanoelectro-mechanical devices.