Binding energy of an off-center donor impurity in ellipsoidal quantum dot with parabolic confinement potential

The binding energy of an off-center hydrogenic donor impurity in weakly oblate Ellipsoidal Quantum Dot (EQD), using the expansion method within the framework of effective mass approximation in strong confinement, is investigated. In this regard, the binding energies of different states of GaAs structures, as functions of the donor position and ellipticity parameter, are calculated. The results show that variations of binding energies are proportional to the ellipticity constant, the dot dimension and the location of impurity.