Experimental investigation of long-wavelength optical lattice vibrations in quaternary AlxInyGa1−x−yN alloys and comparison with results from the pseudo-unit cell model

Raman and Fourier transform infrared (FTIR) spectroscopies have been utilized to measure long-wavelength optical lattice vibrations of high-quality quaternary AlxInyGa1−x−yN thin films at room temperature. The AlxInyGa1−x−yN films were grown on c-plane (0 0 0 1) sapphire substrates with AlN as buffer layers using plasma assisted molecular beam epitaxy (PA-MBE) technique with aluminum (Al) mole fraction x ranging from 0.0 to 0.2 and constant indium (In) mole fraction y=0.1. Pseudo unit cell (PUC) model was applied to investigate the phonons frequency, mode number, static dielectric constant, and high frequency dielectric constant of the AlxInyGa1−x−yN mixed crystals. The theoretical results were compared with the experimental results obtained from the quaternary samples by using Raman and FTIR spectroscopies. The experimental results indicated that the AlxInyGa1−x−yN alloy had two-mode behavior, which includes A1(LO), E1(TO), and E2(H). Thus, these results are in agreement with the theoretical results of PUC model, which also revealed a two-mode behavior for the quaternary nitride. We also obtained new values of E1(TO) and E2(H) for the quaternary nitride samples that have not yet been reported in the literature.