Hydrogenic impurities in quantum dots under intense high-frequency laser field

The effects of intense high-frequency laser field on photoionization cross-section and binding energy of shallow-donor impurities in GaAs/GaAlAs quantum dots are calculated using variational method with the effective-mass approximation. From these calculations, it has been concluded that the dependences of the impurity binding energy and photoionization cross-section on the intense laser field are very significant.