کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1812284 1025612 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characterization of Schottky barrier diodes fabricated from electrochemical oxidation of α phase brass
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Characterization of Schottky barrier diodes fabricated from electrochemical oxidation of α phase brass
چکیده انگلیسی

By careful selection of chloride ion concentration in aqueous sodium chloride, electrochemical oxidation of α phase brass is shown to permit fabrication of either p-type copper (I) oxide/metal or n-type zinc oxide/metal Schottky barrier diodes. X-ray photoelectron and Auger electron spectroscopies provide evidence that barrier formation and rectifying qualities depend on the relative surface abundance of copper (I) oxide and zinc oxide. X-ray diffraction of the resulting diodes shows polycrystalline oxides embedded in amorphous oxidation products that have a lower relative abundance than the diode forming oxide. Conventional I/V characteristics of these diodes show good rectifying qualities. When neither of the oxides dominate, the semiconductor/metal junction displays an absence of rectification.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 406, Issue 8, 1 April 2011, Pages 1582–1585
نویسندگان
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