کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1812469 | 1025617 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nucleation effect of Sia of 6H-SiC-(0 0 0 1)-(â3Ãâ3)R30° surface: First-principles study
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Nucleation effect of Sia of 6H-SiC-(0 0 0 1)-(â3Ãâ3)R30° surface: First-principles study Nucleation effect of Sia of 6H-SiC-(0 0 0 1)-(â3Ãâ3)R30° surface: First-principles study](/preview/png/1812469.png)
چکیده انگلیسی
First-principles calculations have been performed to investigate the nucleation effect of Si adatoms (Sia) of the 6H-SiC-(0 0 0 1)-(â3Ãâ3)R30° reconstruction surface. The results of C adatoms adsorption energy, Sia desorption energy and the substituting energy of carbon with Sia indicate that the Sia of Si-rich-(â3Ãâ3)R30° reconstruction surface behave as nucleation center in favor of the formation of graphene buffer layer on this surface. The Sia atoms of the reconstruction surface are readily substituted by exotic C atoms, especially when there are carbon adatoms on the surface, which urges the growth of the graphene buffer-layer. The mechanism of the epitaxial growth of graphene on the 6H-SiC-(0 0 0 1) surface was also briefly discussed in our present work.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 405, Issue 17, 1 September 2010, Pages 3576-3580
Journal: Physica B: Condensed Matter - Volume 405, Issue 17, 1 September 2010, Pages 3576-3580
نویسندگان
L. Ji, C. Tang, L.Z. Sun, J.X. Zhong,