کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1812599 | 1025619 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modeling and simulation of GaN/Al0.3Ga0.7N new multilayer nano-heterostructure
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper we have proposed a simple model and performed one-dimensional simulation for GaN/Al0.3Ga0.7N multi-layer new nano-heterostructure in order to obtain the energy band profile, which graphs the energy of the conduction and valence band edges versus position. Also, potential distribution has been studied throughout the modeled nano-heterostructure along with electron-hole densities and space charge densities. The total size of the sample was 288Â nm grown on pseudomorph GaN including ohmic contact with the metal on edges. The quantum region is over the whole heterostructure but the interesting region in the heterostructure has been found in between 100 and 196Â nm, which can be applicable for a particular device application.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 405, Issue 10, 15 May 2010, Pages 2431-2435
Journal: Physica B: Condensed Matter - Volume 405, Issue 10, 15 May 2010, Pages 2431-2435
نویسندگان
P.A. Alvi, Sapna Gupta, M.J. Siddiqui, G. Sharma, S. Dalela,