Synthesis of hexagonal boron nitride with the presence of representative metals

Hexagonal boron nitride (h-BN) samples were prepared using the modified O'Connor method with KNO3 and Ca(NO3)2 at different temperatures (1050, 1250, and 1450 °C). The samples were characterized by FTIR, XRD, and SEM techniques. Usage of representative metals exhibited a positive effect on the crystallization of h-BN and they caused the formation of nano-scale products at relatively low temperature. XRD results indicated that there was an increase in interlayer spacing due to the d-π interaction. The calculated lattice constants were very close to the reported value for h-BN.