Ac conductivity and dielectric properties of Ga2S3–Ga2Se3 films

The ac conductivity and dielectric properties of amorphous Ga2S3–Ga2Se3 solid solution in thin film form have been studied in the temperature range from 306 to 403 K and in the frequency range from 102 to 105 Hz. The ac conductivity was found to be proportional to ωs. The exponent s was found to be 0.997 at room temperature and decreased with increasing temperature. It was found also that ac activation energy ΔE(ω) has small values, which decreased with increasing frequency. It was found that relaxation time τ was 5.2×10−5 s. These results were interpreted in terms of the correlated barrier-hopping model. It was found also that the dielectric constant ε1 and dielectric loss ε2 decreased with the increase of frequency, while they decreased with increasing temperature in the investigated ranges. The calculated value of the barrier height Wm (0.485 eV) according to the Guintini equation agreed with that proposed by the theory of hopping of charge carriers over a potential barrier.