کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1813112 | 1525250 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
An evidence of defect gettering in GaN
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effect of Neon ion implantation on the structural and optical properties of MOCVD grown GaN was studied. X-ray diffraction and low temperature photoluminescence measurements were carried out on the implanted samples annealed at 900 °C. The peak at 3.41 eV exhibited an interesting behavior in as-grown and the implanted samples. Annealing has enhanced the intensity of this peak in as-grown samples, but suppressed in all the implanted samples. Capturing of defects by cavities during gettering process is interpreted as the reason for the observed behavior of this luminescence peak. Implantation dose of 5×1015 ions/cm2 caused the complete quenching of yellow band luminescence.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 403, Issues 13–16, 1 July 2008, Pages 2495–2499
Journal: Physica B: Condensed Matter - Volume 403, Issues 13–16, 1 July 2008, Pages 2495–2499
نویسندگان
Abdul Majid, Akbar Ali, J.J. Zhu, Y.T. Wang, H. Yang,