کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1813337 | 1525241 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Kinetics of reverse resistance recovery of silicon diodes: The role of the distance the metallurgical p+n-junction-defect layer formed by 250Â MeV krypton implantation
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Kinetics of reverse resistance recovery of silicon diodes: The role of the distance the metallurgical p+n-junction-defect layer formed by 250Â MeV krypton implantation Kinetics of reverse resistance recovery of silicon diodes: The role of the distance the metallurgical p+n-junction-defect layer formed by 250Â MeV krypton implantation](/preview/png/1813337.png)
چکیده انگلیسی
Silicon diodes with pn-junction irradiated with high-energy krypton ions (energy 250 MeV, fluences from 108 to 109 cm-2) were studied, along with diodes irradiated with electrons (energy 3.5 MeV, fluence 1015 cmâ2). Diodes irradiated with krypton ions are different in the distance δ between the metallurgical border of the abrupt asymmetric p+n-junction and the maximum of primary vacancy distribution. Current-voltage characteristics and kinetics of reverse resistance recovery of two groups of diodes δ1â26.4 μm and δ2â14.5 μm were investigated. It is established that an increase in distance δ resulted in a minor effect on kinetics of reverse resistance recovery of diodes but allows to obtain the decrease of reverse currents by 2-3 times. It is shown that in the transient process of switching of the diodes irradiated with krypton ion fluence of 108 cmâ2, the time of reverse resistance recovery may be divided into two intervals (two phases), which are different in the rate of reverse current decrease.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 404, Issues 23â24, 15 December 2009, Pages 4667-4670
Journal: Physica B: Condensed Matter - Volume 404, Issues 23â24, 15 December 2009, Pages 4667-4670
نویسندگان
N.A. Poklonski, N.I. Gorbachuk, S.V. Shpakovski, V.A. Filipenia, V.A. Skuratov, A. Wieck,