Defects of Ge quantum dot arrays on the Si(0 0 1) surface

The defects of Ge quantum dot arrays formed at moderate temperatures on the Si(0 0 1) surface have been investigated by the ultra high vacuum scanning tunnelling microscope integrated with the molecular beam epitaxy chamber. A preliminary classification of the defects has been carried out. Morphological peculiarities of the defects have been studied. The surface densities of defects of different types have been determined.