کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1813409 | 1025635 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Current-temperature measurements of a SBD evaporated onto inductively coupled plasma cleaned germanium
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Current-temperature measurements of a SBD evaporated onto inductively coupled plasma cleaned germanium Current-temperature measurements of a SBD evaporated onto inductively coupled plasma cleaned germanium](/preview/png/1813409.png)
چکیده انگلیسی
Inductively coupled plasma (ICP) etching has been used primarily on compound semiconductors. There are however compelling reasons to study the effects of ICP etching on Ge. Pd Schottky barrier diodes (SBDs) were resistively evaporated onto Ge (1Â 1Â 1) that was ICP etched at a rate of 60Â Ã
per minute for three or ten minute intervals. Although plasma cleaning is known to introduce defects that were observed with DLTS, the diodes exhibited excellent current-voltage characteristics when cooled down to 80Â K. Current-temperature (IT) scans that were recorded from 20Â K up to 300Â K after cooling under reverse bias showed no effect of recombination/generation (RG). On the other hand, IT scans that were recorded after cooling under zero or forward bias clearly exhibited RG effects in the 100-240Â K temperature range. This effect was found to be completely reversible. In addition, ICP etching leads to superior devices when compared to devices manufactured by RF sputter deposition.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 404, Issue 22, 1 December 2009, Pages 4389-4392
Journal: Physica B: Condensed Matter - Volume 404, Issue 22, 1 December 2009, Pages 4389-4392
نویسندگان
S.M.M. Coelho, F.D. Auret, G. Myburg, P.J. Janse van Rensburg, W.E. Meyer,