Hall effect in pinned and sliding states of NbSe3NbSe3

We report the results of detailed investigations of Hall effect in NbSe3NbSe3 under magnetic fields up to B=9T. We show that the Hall voltage, VHVH, changes sign in a wide temperature range and that the magnetic field for which VHVH crosses zero is temperature dependent. We demonstrate that in high magnetic field the CDW motion changes significantly the Hall voltage. These results indicate that, in NbSe3NbSe3, the CDW in the sliding state interacts differently with electrons and holes.