کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1813778 1025640 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Hydrostatic pressure dependence of interface state density of Cd/n-type GaAs Schottky barrier diodes
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Hydrostatic pressure dependence of interface state density of Cd/n-type GaAs Schottky barrier diodes
چکیده انگلیسی

The interface state density obtained from current–voltage (I–V) characteristics of Cd/n-type GaAs Schottky barrier diodes (SBDs) at room temperature under hydrostatic pressure was investigated. SBD parameters such as ideality factor (n), series resistance (Rs), and barrier height (φb), were obtained from I–V measurements using Cheung's method. The diode parameters, such as ideality factor, series resistance, and barrier heights, were found in the range of 1.464–1.474, 0.995–4.359 kΩ and 0.739–0.777 eV, respectively, with sweeping pressure. The diode shows non-ideal I–V behaviors with an ideality factor greater than unity. Additionally, the energy distribution of interface state density was determined from the forward bias I–V characteristics by taking into account the bias dependence of the effective barrier height. The results have shown that the presence of the interfacial native oxide layer between the metal and the semiconductor seriously affects interface state density under hydrostatic pressure.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 405, Issue 1, 1 January 2010, Pages 287–290
نویسندگان
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