کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1813895 1525249 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Threshold for photoelectric emission from a quantum ring of narrow-gap semiconductor
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Threshold for photoelectric emission from a quantum ring of narrow-gap semiconductor
چکیده انگلیسی

In this paper, we have investigated the threshold energy required for photoelectric emission of electrons from a torroidal quantum ring of degenerate narrow-gap semiconductor. Current density due to electrons emitted from the ring illuminated by normal radiation has been calculated considering the effect of band non-parabolicity of the narrow-gap semiconductor. The computed results show that the current density increases in a staircase manner with the increase of incident photon energy. The band non-parabolicity causes the increase in threshold energy for photoelectric emission of electrons. The photoemission becomes an oscillatory function of the cross-sectional radius of the ring, and may serve as an important tool for estimating parameters like cross-sectional radius, doping density and band non-parabolicity.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 403, Issues 19–20, 1 October 2008, Pages 3734–3739
نویسندگان
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