کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1813902 | 1525249 | 2008 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nanometer-scale capacitance spectroscopy of semiconductor donor molecules
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We review recently reported scanned-probe capacitance measurements of electrons entering silicon donors in a gallium-arsenide heterostructure. Single-electron peaks were observed in the capacitance-versus-voltage curves. The precise voltage position of the peaks varied with the location of the probe, reflecting a random distribution of silicon within the donor plane. In addition, three broader capacitance peaks were observed independent of the probe location, indicating clusters of electrons entering the system at approximately the same voltages. These broad peaks are consistent with the addition energy spectrum of donor molecules, effectively formed by nearest-neighbor pairs of silicon donors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 403, Issues 19–20, 1 October 2008, Pages 3774–3780
Journal: Physica B: Condensed Matter - Volume 403, Issues 19–20, 1 October 2008, Pages 3774–3780
نویسندگان
S.H. Tessmer, I. Kuljanishvili, C. Kayis, J.F. Harrison, C. Piermarocchi, T.A. Kaplan,