کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1813964 1025643 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Terahertz pulse emission from semiconductor surfaces illuminated by femtosecond Yb:KGW laser pulses
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Terahertz pulse emission from semiconductor surfaces illuminated by femtosecond Yb:KGW laser pulses
چکیده انگلیسی

The amplitudes of terahertz pulses emitted from the surfaces of InAs, InSb, InGaAs, GaAs and Ge after their excitation by femtosecond 1 μm laser pulses was compared. It has been found that this effect is most efficient in p-type InAs. The mechanisms leading to the terahertz emission are investigated and discussed. It has been concluded that in the majority of the investigated semiconductors the main contribution to THz pulse emission comes from the electrical-field-induced optical rectification effect.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 404, Issue 20, 1 November 2009, Pages 3386–3390
نویسندگان
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