کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1814057 | 1025644 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
DC and AC conductivities of (As2S3)100âx(AsSe0.5Te0.5I)x chalcogenide glasses
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The DC and AC conductivities of samples from the system (As2S3)100âx(AsSe0.5Te0.5I)x, where x=0, 5, 10, 15, 20, 25, 30, 35, 50, 70 and 90Â mol%, were measured as a function of temperature. Besides, the AC conductivities of the samples with x=10 and 30 were measured as a function of frequency from room temperature to the glass transition temperature. The DC conductivity dependence on temperature is of the Arrhenius type, whereas the value of the pre-exponential factor suggests the electrical conduction by localized states in the band tails and by localized states near the Fermi level. The small values of the conduction activation energy (10â2-10â1Â eV) obtained at higher frequencies suggest that the conduction in these materials is due to hopping of charge carriers between close defect states near the Fermi level.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 403, Issue 17, 1 August 2008, Pages 2578-2583
Journal: Physica B: Condensed Matter - Volume 403, Issue 17, 1 August 2008, Pages 2578-2583
نویسندگان
S.R. LukiÄ, S.J. Skuban, F. Skuban, D.M. PetroviÄ, A.S. Tver'yanovich,