The epitaxial growth of the PrCaSrMnO and LaCaMnO/PrCaSrMnO/LaCaMnO multilayer thin films with CMR effects prepared by a new method: Precursor Film Sintering

We have successfully synthesized PrSrCaMnO thin films (with a nominal structure of Pr0.7Sr0.05Ca0.25MnO3) and some heterostructure thin films on LaAlO3 (1 0 0) single-crystal substrates by a newly invented precursor film sintering technique. The XRD analysis showed that the PCSMO thin films by the PFS method consisted of epitaxially grown single-phase perovskite structures, oriented to the c-axis direction and without secondary phases. LPL, PLP and LCMO thin films prepared by the PFS method were all epitaxially grown thin films with good quality, which were confirmed by XRD patterns. The effect of the critical sintering temperature was carefully studied based on XRD patterns and SEM images. It was found that the sintering temperature higher than 1200 °C gave rise to high-quality epitaxial thin films, but a secondary phase appeared at this temperature. Large values of the MR of PCSMO, LCMO and LPL thin films have been observed. Besides, the advantages of the PFS method include simple equipments, common chemical compounds and a variety of shapes of the prepared thin films.