Determination of the interface state density of the In/p-Si Schottky diode by conductance and capacitance–frequency characteristics

The electrical characterization of the In/p-Si Schottky diode has been investigated by conductance and capacitance–frequency techniques. The characteristic parameters of the interface states have been determined from the capacitance–frequency and conductance–frequency measurements. The capacitance of the In/p-Si Schottky diode decreases with increasing frequency. The increase in capacitance at lower frequencies results from the presence of interface states. The peak observed in the conductance curve of the In/p-Si diode indicates the presence of an interfacial layer in the In/p-Si Schottky barrier. The interface-state parameters, interface-state density Dit and relaxation time τ of the In/p-Si diode were calculated. The interface-state density was found to vary from 7.82×1012 eV−1 cm−2 in (0.53−Ev) eV to 8.01×1012 eV−1 cm−2 in (0.28−Ev) eV. Furthermore, the relaxation time was found to vary from 4.543×10−8 s in (0.53−Ev) eV to 4.435×10−8 s in (0.28−Ev) eV.