کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1814946 1525254 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Anomaly enhancement of the dislocation velocity in SiC
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Anomaly enhancement of the dislocation velocity in SiC
چکیده انگلیسی
Under forward bias SiC p-i-n diodes exhibit an anomaly enhancement of the partial dislocation mobility. Through first-principle calculations, we have shown that Peierls barriers and electrical activities are strongly dependent on the dislocation core structures. Further we have found that solitons or antiphase defects along the dislocation line cannot explain alone the enhancement of the dislocation velocity. We have proposed a new theoretical model that can explain the enhancement of the dislocation mobility under forward bias. This model can be applied to any semiconductor materials in order to predict the behaviour under electron-hole plasma injections.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volumes 401–402, 15 December 2007, Pages 62-66
نویسندگان
, , , , , , ,