کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1815000 | 1525254 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Deep defect states in narrow band-gap semiconductors
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Deep defect states in narrow band-gap semiconductors Deep defect states in narrow band-gap semiconductors](/preview/png/1815000.png)
چکیده انگلیسی
The nature of defect states associated with group III impurities (Ga, In, and Tl) in PbTe, a narrow band-gap semiconductor, has been studied within density functional theory and supercell model. For all three impurities (both substitutional—at the Pb site and interstitial—at the tetrahedral site), there is a hyper-deep defect state which lies about 0.5–1.0 eV below the valence band. It is a highly localized bonding state between the impurity s-orbital and the surrounding p-orbitals of the Te atoms. The corresponding anti-bonding state, denoted as the deep defect state, lies in the band-gap region. Its precise position vis-à-vis the conduction- and valence-band extrema controls the unusual properties exhibited by these defects.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volumes 401–402, 15 December 2007, Pages 291–295
Journal: Physica B: Condensed Matter - Volumes 401–402, 15 December 2007, Pages 291–295
نویسندگان
S.D. Mahanti, Khang Hoang, Salameh Ahmad,