Radiation-produced defects in n-GaN

Radiation-produced defects in doped and nominally undoped n-GaN with charge carrier concentrations in a range of 4×1016 cm−3 to about 2×1018 cm−3 are investigated. Layers of n-GaN are irradiated with fast electrons at 0.9 MeV, 60Co gamma rays and protons at 150 keV. The production rates of radiation defects in n-GaN are estimated and compared with literature data. Annealing processes of radiation defects in n-GaN in the temperature range 100-700 °C are also discussed. The annealing behavior appears to be complicated. Two temperature intervals, from T=100 to 400 °C and from T=500 to 700 °C, are characteristic for modification and annealing processes of radiation-produced defects in n-GaN.