کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1815017 | 1525254 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Acceptor-related luminescence at 3.314Â eV in zinc oxide confined to crystallographic line defects
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Acceptor-related luminescence at 3.314Â eV in zinc oxide confined to crystallographic line defects Acceptor-related luminescence at 3.314Â eV in zinc oxide confined to crystallographic line defects](/preview/png/1815017.png)
چکیده انگلیسی
The 3.314 eV emission band characteristically appearing in bulk, epitaxial, and nano-structured ZnO samples is studied by photoluminescence (PL) and spatially resolved cathodoluminescence (CL) at cryogenic temperatures along with SEM and TEM. We show that the band originates from a free electron transition to a neutral acceptor (e, A0) with ionization energy of 130±2 meV. Our TEM data reveal that the acceptor is a complex defect related with basal plane stacking faults. We also conclude that it is unrelated with elemental impurities such as group V elements used for nominal ZnO doping to achieve p-type conductivity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volumes 401â402, 15 December 2007, Pages 362-365
Journal: Physica B: Condensed Matter - Volumes 401â402, 15 December 2007, Pages 362-365
نویسندگان
M. Schirra, R. Schneider, A. Reiser, G.M. Prinz, M. Feneberg, J. Biskupek, U. Kaiser, C.E. Krill, R. Sauer, K. Thonke,