کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1815019 1525254 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Phosphorus-doped ZnO films grown nitrogen ambience by magnetron sputtering on sapphire substrates
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Phosphorus-doped ZnO films grown nitrogen ambience by magnetron sputtering on sapphire substrates
چکیده انگلیسی
We grew phosphorus-doped ZnO films at various temperatures on a sapphire substrate by magnetron sputtering to obtain a p-type ZnO film. The ZnO film grown under the ambient gas mixture of nitrogen and argon showed p-type behavior at a higher growth temperature. The electron concentration and mobility of the as-deposited p-type ZnO were 1.2×1017 cm−3 and 25 cm2/V s, respectively. The peak shift of X-ray diffraction and the strong acceptor-bound exciton peak of photoluminescence indicated that the incorporation of phosphorus was enhanced with increasing growth temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volumes 401–402, 15 December 2007, Pages 370-373
نویسندگان
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