کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1815449 | 1525244 | 2009 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation and photoelectrochemical applications of chemically synthesized Sb-doped p-AgIn5S8 film electrodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Chemically synthesized Sb-doped p-type AgIn5S8 films with several parameters, such as ratios of Sb/Ag in the reaction solution and multiple depositions of films, were grown on indium–tin-oxide coated glass substrates in this study. The X-ray diffraction patterns of samples show the cubic AgIn5S8 phase in these films. The thicknesses, energy band gaps, and carrier densities of these samples were in the ranges of 537–776 nm, 1.71–1.73 eV, and 6.57×1014–8.82×1014 cm−3, respectively. The maximum photocurrent density of samples with an external potential of −3.5 V vs. a Pt electrode was found to be −5.02 mA/cm2 under illumination using a 300 W Xe lamp system.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 404, Issues 8–11, 1 May 2009, Pages 1264–1270
Journal: Physica B: Condensed Matter - Volume 404, Issues 8–11, 1 May 2009, Pages 1264–1270
نویسندگان
Kong-Wei Cheng, Chao-Ming Huang, Guan-Ting Pan, Wen-Sheng Chang, Tai-Chou Lee, Thomas C.K. Yang,