کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1815595 | 1025667 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
IR and SIMS studies in 70% SiC-C films of hydrogen introduced with different methods
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: IR and SIMS studies in 70% SiC-C films of hydrogen introduced with different methods IR and SIMS studies in 70% SiC-C films of hydrogen introduced with different methods](/preview/png/1815595.png)
چکیده انگلیسی
70% SiC-C films were prepared with magnetron sputtering deposition followed by Ar+ ion bombardment. Hydrogen was then introduced to these films with ion implantation and permeation techniques for a comparison. Infrared (IR) transmission measurements were performed to analyze the hydrogen-related vibrational states in carbon-carbide. And secondary ion mass spectrometry (SIMS) was also employed to analyze hydrogen depth profiles in these SiC-C films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 389, Issue 2, 15 February 2007, Pages 207-212
Journal: Physica B: Condensed Matter - Volume 389, Issue 2, 15 February 2007, Pages 207-212
نویسندگان
L.W. Wang, B. Yang, D.Z. Wang, N.K. Huang,