IR and SIMS studies in 70% SiC-C films of hydrogen introduced with different methods

70% SiC-C films were prepared with magnetron sputtering deposition followed by Ar+ ion bombardment. Hydrogen was then introduced to these films with ion implantation and permeation techniques for a comparison. Infrared (IR) transmission measurements were performed to analyze the hydrogen-related vibrational states in carbon-carbide. And secondary ion mass spectrometry (SIMS) was also employed to analyze hydrogen depth profiles in these SiC-C films.