Characterization of CuInSe2 single crystal

High quality CuInSe2 (CIS) single crystals grown by the vertical Bridgman method. The electrical conductivity, Hall coefficient and thermoelectric power were measured as a function of temperature. The energy gap was found 1.04 eV. The crystals were characterized structurally by X-ray diffraction and compositionally by microprobe analyses. Throughout joining the electrical with thermoelectric power measurements many physical parameters were estimated. The effective mass of holes mp* and electrons mn* were determined at room temperature and found to be 1.66×10−30 and 8.6×10−36 kg, respectively. Also, at the same temperature the mobility was found to be 956 cm2/V s. The hole and electron diffusion coefficients were found to be 23.9 and 35.85 cm2/s. The relaxation times for holes and electrons were calculated and yielded the values 9.9×10−13 and 7.7×10−18 s, respectively. The diffusion length for holes and electrons was obtained as Lp=4.86×10−6 cm and Ln=16.61×10−9 cm.